| PART |
Description |
Maker |
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| SSM6E01TU |
Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) N-Channel MOS Type (Planer) Load Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| KU310N10P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KUS220N10D |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU035N06P |
N-ch Trench MOS FET
|
KEC
|
| KU045N10P |
N-ch Trench MOS FET
|
KEC
|
| KU034N08P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| 2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system
P-channel MOS FET (-60V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| VSSA3L6S-M3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
